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产品名称: 磷化铟
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4inch InP Single Substrate Specifications

Conduct Type

S-C-N

Dopant

Zn-dopant or Sn-Dopant

Dimensions

100.0±0.3mm

Thickness

350μm±25μm According to customer requirements

Orientation

100)±0.5°According to customer requirements

Edge Beveling

Yes

CC

1.0E183.0E18/cc

Resistivity(300K)

1.0E-33.0E-3 ohm.cm

Mobility

50~2000cm2/V.s

TTV/Bow/Warp

10μm

Surface Finish

 Side1Polished      Side2Etched

Packaging

Cassette or Tray

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