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产品名称: 氮化镓
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2in GaN templates Specifications:

Item

GaN-T-C-N-C50

CaN-T-C-P-C50

Dimensions

Φ50.8mm±0.1mm

Thickness

4μm、1025μm

4μm

Orientation

C-plane(0001)±0.5°

Conduction Type

 N-type
(Un-doped)

N-type
(Si-doped)

P-type
Mg-doped

Resistivity(300K)

<0.5Ω

<0.05Ω

10Ω

Dislocation Density

Less than 5×108cm-2

Substrate Structure

GaN/Sapphire(0001)

Useable Surface Area

>90%

Polishing

Standard: SSP  Option: DSP

Packaging

Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere

 

 

4in GaN templates Specifications:

Item

GaN-T-C-N-C100

Dimensions

Φ100.0mm±0.1mm

Thickness

4μm、1025μm

Orientation

C-plane(0001)±0.5°

Conduction Type

 N-type
(Un-doped)

Resistivty(300K)

<0.5Ω

Dislocation Density

Less than 5×108cm-2

Substrate Structure

GaN/Sapphire(0001)

Useable Surface Area

>90%

Polishing

Standard: SSP  Option: DSP

Package

Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere