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产品名称: 碳化硅
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4&6inch 4H-SiC Substrate Specifications

Grade

Production

Research

Dummy

Dimensions

100±0.1mm & 150±0.1mm

Thickness

500μm±25μm According to customer requirements

Face Orientation

on axis<0001>±0.2°Off axis:1.0/4.0/8.0 toward<11-20>±0.5°

Edge

Beveling SR0.25mm

Micropipe density

5cm-2

10cm-2

30cm-2

FWHM

60arcsec

60arcsec

100arcsec

Resistivty(300K)

SI>105Ω

SI>105Ω

N-Type:0.01Ω㎝~0.03Ω

N-Type:0.01Ω㎝~0.03Ω

TTV/Bow/Warp

10μm20μm30μm

10μm25μm40μm

20μm30μm45μm

Roughness

Ra0.2nm

Ra0.2nm

Ra0.3nm

Suface Finsh

CPolished    SiPolished or According to customer requirements

Cracks by high intensity light

None

 L:≤2cmQuantity2bar

Scratches by high intensity light

None

Polytype by high intensity light

20%

Usable area

90%

90%

75%