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产品名称: 砷化镓
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Semiconducting GaAs Wafers

a)  LED Applications

Item

Unit

Specifications

Remarks

Crystal Growth Method

VGF

Dopant

Si

Zn-doped available

Diameter

inch

2", 3", 4" & 6"

Orientation

0°/2°/6°/15° off

Other orientations available

OF/IF

EJ or US

Carrier Concentration

/cm3

(0.4-4)×1018

Mobility

cm2/v.s

1500-3000

Etch Pit Density(EPD)

/cm2

AVE5000

Laser Marking

Upon request

Thickness

μm

220-350

Other thickness available

TTV, Bow, Warp

μm

10

Surface

P/E , P/P

Epi-Ready

Yes

Package

Single or Cassette


b)  LD Applications

Item

Unit

Specifications

Remarks

Crystal Growth Method

VGF

Dopant

Si

Zn-doped available

Diameter

inch

2", 3", 4" & 6"

Orientation

2°/6°/15° off

Other orientations available

OF/IF

EJ or US

Carrier Concentration

/cm3

(0.4-4)×1018

Mobility

cm2/v.s

1500-3000

Etch Pit Density(EPD)

/cm2

AVE5000

Laser Marking

Upon request

Thickness

μm

220-350

Other thickness available

TTV, Bow, Warp

μm

10

Surface

P/E , P/P

Epi-Ready

Yes

Package

Single or Cassette

 


Semi-insulating GaAs Wafers

Microelectronics Applications

Item

Unit

Specifications

Remarks

Crystal Growth Method

VGF

Dopant

Undoped

Diameter

inch

4" & 6"

Wafer Orientation

(100) or 2° off

OF/IF

EJ ,US or notch

Resistivity(@ RT)

/cm3

(0.1-3)×108

other range available

Mobility

cm2/v.s

>5000

Etch Pit Density(EPD)

/cm2

AVE500

Laser Marking

Upon request

Thickness

μm

350-675

TTV, Bow, Warp

μm

5

Surface

P/P

Epi-Ready

Yes

Package

Single or Cassette

 

GaAs epitaxial


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